VOLT – AMPERE CHARACTERISTIC FEATURES OF AgGaS2 THIN FILMS
A.Ch. Mammadova1,2
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ABSTRACT

Ternary compounds AgGaSe2 were obtained in high vacuum. Phase analysis and structure properties of the obtained samples were studied by electron diffraction and X-ray structural analysis (XRD). It was shown that amorphous layers containing AgGaSe2 have parameters a = 0.599 nm; c = 1.089 nm and crystallize in tetragonal syngony. During the investigation of volt amper characteristics (VAC) of thin amorph AgGaS2 films it was determined that in this layers current is confined with volume charges and it is result of monopolar injection mechanism.

Keywords: VAC, amorphous, polycrystalline, thin films, volume charge-limited current
DOI:10.70784/azip.2.2025224

Received: 23.04.2025
Internet publishing: 29.04.2025    AJP Fizika A 2025 02 az p.24-28

AUTHORS & AFFILIATIONS

Institute of Physics Ministry of Science and Education Republic of Azerbaijan, 131 H.Javid ave. Baku, AZ 1073
Baku State University, 23, Z. Khalilov st., Baku, AZ 1148, Azerbaijan
E-mail: amamedova@inbox.ru

Graphics and Images

                   

   Fig.1-2-3-4         Fig.5-6-7

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