ELEKTROPHYSICAL PROPERTIES OF ErSbSe3 AND ErBiSe3 COMPOUNDS
F.M. Sadigov1, S.H. Mammadova1, Ch.I. Abilov2, Z.I. Ismayilov1
   download pdf   

ABSTRACT

In the present paper, the specific electrical conductivity of ErSbSe3 and ErBiSe3 compounds in the temperature range of 300÷900 K, thermoEMF, temperature dependences of the thermoelectric coefficient, and total thermal conductivity were studied. It was determined that both compounds have a complex zone structure. It has been established that the bipolar mechanism of thermal conductivity has a strong effect on the temperature dependence of the thermal conductivity of the ErBiSe3 compound. In addition, calculations of the values of the thermoelectric efficiency coefficient of the ErBiSe3 compound have shown that the compound is promising to fabricate the negative arm of thermocouples. The specific electrical conductivity of the ErBiSe3 compound decreases slightly in the temperature range of 300-540K and has a semimetallic character. At temperatures above 600K, this increase becomes sharper and has a linear character. The value of the thermo-e.h.q. coefficient reaches a maximum at 700K, and then decreases, i.e. its temperature-dependent change is complex. Analogous processes From the temperature dependence of the thermoelectric coefficient of the ErSbSe3 compound, it was found that the ErBiSe3 and ErSbSe3 compounds have “n”-type conductivity. The ErBiSe3 compound can be used as a promising thermoelectric material in the preparation of thermoelectric energy converters.

Keywords: ternary compound, kinetic coefficients, complex zone structure, thermoelectric efficiency, negative arm of the thermocouple.
DOI:10.70784/azip.1.2025236

Received: 21.04.2025
Internet publishing: 30.05.2025    AJP Fizika E 2025 02 en p.36-40

AUTHORS & AFFILIATIONS

1. Baku State University, Baku, Z. Khalilov str. 23
2. Azerbaijan Technical University, Baku, H. Javid ave., 25
E-mail: saba.mammadova36@gmail.com, cabilov@yahoo.com

Graphics and Images

        

    Fig.1-2-3-4

 [1]   P. Woodrow. Chalcogenides: Advances in Research and Applications. Nova, 2018.
[2]   X. Liu, S. Lee, J.K. Furdyna, T. Luo, Y-H. Zhang, Chalcogenide. From 3D to 2D and Beyond. Elsevier, 2019.
[3]   R. Scheer, H-W. Schock. Chalcogenide Photovoltaics: Physics, Technologies, and Thin Film Devices. Wiley-VCH, 2011.
[4]   N. Alonso-Vante. Chalcogenide Materials for Energy Conversion: Pathways to Oxygen and Hydrogen Reactions. Springer, 2018.
[5]   A.J. Hagmann. Chalcogenide topological insulators. In: Chalcogenide From 3D to 2D and Beyond. Woodhead Publishing Series in Electronic and Optical Materials. 305-337, 2020. https://doi.org/10.1016/B978-0-08-102687-8.00015-4
[6]   W. Yang, J.H. Kim, O.S. Hutter, et al. Benchmark performance of low-cost Sb2Se3 photocathodes for unassisted solar overall water splitting. Nature Communications, 2020, v. 11, p. 861.
[7]   B.R. Sankapal, C.D. Lokhande. Studies on photoelectrochemical (PEC) cell formed with silar deposited Bi2Se3-Sb2Se3 multilayer thin films. Sol. Energy Mater. Sol. Cell.2001, v. 69, p.43-52.
[8]   W. Li, L. Deng, X. Wang, J. Cao, Y. Xie, Q. Zhang, H. Zhang, H. Deng and S. Cheng. Close-spaced thermally evaporated 3D Sb2Se3 film for high-rate and high-capacity lithium-ion storage. Nanoscale, 2021, v.13, p.9834-9842
[9]   M.-Z. Xue, Z.-W. Fu. Pulsed laser deposited Sb2Se3 anode for lithium-ion batteries, J.Alloys Compd. 458, 2008, 351-356.
[10]  Kushal Mazumder, Parasharam M. Shirage. A brief review of Bi2Se3 based topological insulator: From fundamentals to applications. Journal of Alloys and Compounds, Volume 888, 25 December 2021, 161492.
[11]  Ping Feng, Jia-Xiang Zhang, 7Mao-Yin Ran, Xin-Tao Wu, Hua Lin and Qi-Long Zhu. Rare-earth-based chalcogenides and their derivatives: an encouraging IR nonlinear optical material candidate. Chem. Sci., 2024, 15, 5869-5896.
[12]  Vidyanshu Mishra, Dundappa Mumbaraddi, Abishek K. Iyer, Arthur Mar. Rare-earth indium selenides RE3InSe6 (RE = La−Nd, Sm, Gd, Tb): Structural evolution from tetrahedral to octahedral sites. Journal of Solid State Chemistry, Volume 297, May 2021, 122096
[13]  S.Z. Imamaliyeva, I.F. Huseynova, D. Daraselia, et al. Phase Relations in the Tl2Te-TlBiTe2-TlGdTe2 Compositions Region of the Tl-Bi-Gd-Te System and Magnetic Properties of the TlBi1−xGdxTe2 Solid Solutions. J. Phase Equilib. Diffus. 45, 459–468 (2024). https://doi.org/10.1007/s11669-024-01096-w
[14]  S.Z. Imamaliyeva, F.N. Guseinov, M.B. Babanly. Phase diagram of Tl5Te3-Tl4PbTe3-Tl9NdTe6 system and some properties of solid solutions, Chemical Problems, 2008, 640-646.
[15]  S.Z. Imamaliyeva. Phase diagrams in the development of thallium-REE tellurides with Tl5Te3 structure and multicomponent phases based on them. Condensed matter and interphases, 2018, 20 (3), 332-347
[16]  B. Cantor. Exploring Multicomponent Phase Space to Discover New Materials. J. Phase Equilib. Diffus. 45, 188–218, 2024. https://doi.org/10.1007/s11669-024-01131-w
[17]  M.B. Babanly, L.F. Mashadiyeva, D.M. Babanly, S.Z. Imamaliyeva, D.B. Taghiyev, Y.A. Yusibov. Some aspects of complex investigation of the phase equilibria and thermodynamic properties of the ternary chalcogenid systems by the EMF method. Russian J.Iniorg.Chem, 2019, № 13, p.1649-1671
[18]  V.N. Jafarova. Investigation of the electronic and magnetic properties of the Zn1−xMnxSe compound from fundamental principles. AJP PHYSICS, 2023 vol. XXIX № 1, section: Az, pp.18-21
[19]  A.Sh. Abdinov, R.F. Babaeva. On the issue of anomalies of electrophysical parameters in layered monoselenides of semiconductor compounds AIIIBVI // AJP PHYSICS 2018 vol. XXIV № 3, section: Az, pp.3-5
[20]  F.M. Sadiqov, N.M. Alizade, Z.I. Ismailov. Character of chemical interaction in the triple system Er-Bi(Sb) -Se. Евразийский Союз Ученых (ЕСУ) # 1(82), 2021, c.63-67
[21]  M.A. Kretova, E.S. Avilov, V.S. Zemskov. Introduction to the experimental methodology, results and their discussion. Moscow, Nauka, 2004, 196 p.
[22]  А.С. Охотин. Теплопроводность твердых тел (справочник) М., Энергоатомиздат, 1984, 320с.
[23]  M.Sh. Hasanova, Ch.J. Abilov. The nature of phase formation in the In2Te3 –Cu2Ga4Te7 system and some electrophysical properties in the solid solutions (Cu2Ga4Te7)1-x. International Journal of Engineering Innovations and Research, 2015, vol.4, no.6, pp.884-887.
[24]  B.Yu. Mogilevsky, A.F. Chudnovsky. Thermal conductivity of semiconductors. Moscow, Nauka, 1972, 536 p.
[25]  V.S. Oskotsky, I.A. Smirnov. Defects in crystals and thermal conductivity L., Science, 1972, 160 p.
[26]  G.N. Elmanov, A.G. Zaluzhny, V.I. Skrytny, E.A. Smirnov, V.N. Yal'tsev. Solid State Physics Moscow: 2007. – 636 p.