INFLUENCE OF ELECTRIC FIELD ON FORMATION OF AMORPHOUS TlIn1-xSnxTe2 THIN FILMS
E.Sh. Alekperov1, G.B. Ibragimov2, A.M. Nazarov2
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ABSTRACT

The effect of electric field on the formation of amorphous TlIn1-xSnxTe2 films (x=0.02÷0.09) with a thickness of 30 nm, obtained in a constant electric field of E=3000 V•cm-1intensity, in high vacuum by thermal deposition on substrates from fresh cleavages of KCl, KJ and celluloid, located at a temperature below T=213K, was studied by high-energy electron diffraction method. After the cooling of the steel table on which the substrates with the amorphous film were located ceased, the samples obtained for the study were brought to room temperature in a vacuum at a rate of 2 K/min. To prevent oxidation, the TlIn1-xSnxTe2 films were placed in a carbon capsule of 2÷4 nm thick. It was found that a constant electric field affects the interatomic distances, coordination numbers, and stabilization time of this amorphous phase.

Keywords: vacuum, electric field, electron diffraction, structure, amorphous film.
DOI:10.70784/azip.1.2025253

Received: 03.06.2025
Internet publishing: 18.06.2025    AJP Fizika E 2025 02 en p.53-56

AUTHORS & AFFILIATIONS

1. Ministry of Science and Education of the Republic of Azerbaijan, Baku State University Baku, AZ-1148, Azerbaijan
2. Institute of Physics named after H.M.Abdullayev Baku, Azerbaijan, 131 H.Javid ave. Baku, AZ-1073, Azerbaijan
E-mail: alekperoveldar@mail.ru

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