ELECTRICAL PROPERTIES AND DUAL BARRIER PHENOMENA IN Au/3% AND 5% Ni-DOPED PVP/n-Si SCHOTTKY DIODES: ROLE OF INTERLAYER ENGINEERING
A.S. Abdinov, I.M. Afandiyeva, E.R. Bakhtiyarli
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ABSTRACT

We investigated the electrical characteristics of Au/Ni-doped polyvinylpyrrolidone (PVP)/n-Si Schottky diodes to evaluate the effect of Ni concentration on barrier formation and charge transport. Current–voltage (I–V) measurements were performed in the range of −3.5 V to +3.5 V at room temperature (RT) (300 K). Key diode parameters, including ideality factor (n), reverse (saturation) current (Is), and effective barrier heights (ΦB0), were extracted using thermionic emission (TE) theory. The Ln(I)–V characteristics of Ni-doped devices revealed two distinct linear regions, confirming the presence of a second barrier mechanism arising from the polymer interlayer. Increasing Ni content from 3% to 5% improved the interface quality, leading to higher barrier heights (0.631eV →0.833eV), lower saturation currents (2,26x10-6A→9.63x10-10 A), and reduced ideality factors (3.14 → 1.44). These results demonstrate that Ni doping modulates the double-barrier transport behavior, enhancing rectifying performance and providing a tunable approach for polymer–semiconductor hybrid Schottky devices.

Keywords: Schottky diode; Thermionic emission, Metal Polymer semiconductors (MPS), double-barrier transport behavior, polyvinylpyrrolidone, polyvinyl alcohol.
DOI:10.70784/azip.1.2025323

Received: 02.09.2025
Internet publishing: 08.09.2025    AJP Fizika E 2025 03 en p.23-26

AUTHORS & AFFILIATIONS

Baku State University, Department of Physics, AZ1148, Baku, Azerbaijan
E-mail: abdinov-axmed@yandex.ru, elvinb18104@sabah.edu.az, I_afandiyeva@yahoo.com

Graphics and Images

        

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 [1]   B.L. Sharma. Metal-semiconductor Schottky Barrier Junctions and Their Applications (Plenum Press, New York,1984)
[2]   A.R. Blythe, D. Bloor. Electrical Properties of Polymers (Cambridge University Press, 2005)
[3]   S.M. Sze. Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981)
[4]   S. Demirezen, Ş. Altındal, Y. Azizian-Kalandaragh, A.M. Akbaş. A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects. Phys. Scr. 96, 055811, 2022.
[5]   M. Al-Dharob, H.E. Lapa, A. Kökce, A.F. Özdemir, D.A. Aldemir, Ş. Altındal. The investigation of current-conduction mechanisms (CCMs) in Au/(0.07 Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (IVT) measurements.Mater. Sci. Semicond. Process.84-85, 98–105, 2018.
[6]   A. Eroğlu, S. Demirezen, Y. Azizian-Kalandaragh et al. A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer. J Mater Sci: Mater Electron 31, 14466–14477, 2020.
[7]   S. Altındal Yeriskin. Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms (CMs) in the Au/n-Si (MS) structures at room temperature, J.Inst.Sci.Technol.9 (2), 835–846, 2019.
[8]   F. Haaf, A. Sanner, F. Straub. Polymers of N-vinylpyrrolidone: synthesis, characterization and uses, Polym. J. 17, 143–152, 1985.
[9]   Y. Azizian-Kalandaragh, J. Farazin, Ş. Altindal, et al. Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements. Appl. Phys. A 126, 635, 2020.
[10]  O. Çiçek, Ş. Altındal, Y. Azizian-Kalandaragh. A highly sensitive temperature sensor based on Au/graphene-PVP/n-Si type Schottky diodes and the possible conduction mechanisms in the wide range temperatures. IEEE Sens. J. 16, 14081, 2020.
[11]  Ş. Altındal, Ö. Sevgili, Y. Azizian‑Kalandaragh. A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room temperature. Journal of Materials Science: Materials in Electronics, 30, 9273–9280 (2019)
[12]  O. Üstün, U. Özçelik, Y. Azizian-Kalandaragh, Ş. Altındal, Ş. Özçelik. A comparative study of the Au/n-Si (MS) andAu/(ZnO:CeO2:PVP)/n-Si (MPS) Schottky structures by using current/voltage characteristics in dark and under illumination, Phys. Scr. 99 , 095504, 2024.
[13]  Ç. Ş. Güçlü, E.Tanrıkulu, A. Dere, Ş. Altındal, Y. Azizian‑Kalandaragh. A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements. J. Mater. Sci. Mater. Electron., 34, 1909, 2023.
[14]  A. Tataroğlu, Ş. Andal, Y. Azizian-Kalandaragh. Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer,Physica B: Condensed Matter, Volume 577, 2020, 411733, 2019.
[15]  Kallum M. Koczkur. Stefanos Mourdikoudis, Lakshminarayana Polavarapu, Sara E. Skrabalak. Polyvinylpyrrolidone (PVP) in nanoparticle synthesis. Dalton Transactions, 45 (42) pp, 17883-17905, 2015.
[16]  N.A. Sabahi, A.M. Shahedi, G. Pirgholi-Givi, S.A. Delbari, J. Farazin, S. Altındal, Y. Azizian-Kalandaragh. On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements. Appl. Phys. A 126, 1–9, 2020.
[17]  U. Aydemir, İ. Taşçıoğlu, Ş. Altındal, İ. Uslu, A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes, Materials Science in Semiconductor Processing,Volume 16, Issue 6, Pages 1865-1872, 2013.
[18]  Ç.Ş. Güçlü, M.Ulusoy, Ş .Altındal. A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements. J Mater Sci: Mater Electron 35, 881, 2024.
[19]  N.A. Al-Ahmadi. Metal oxide semiconductor-based Schottky diodes: a review of recent advances. Mater. Res. Express 7, 032001, 2020.
[20]  A. Büyükbaş-Uluşan, A. Tataroğlu, S.A. Yerişkin. Analysis of the current transport characteristics (CTCs) in the Au/n-Si Schottky diodes (SDs) with Al2O3 interfacial layer over wide temperature range. ECS J. Solid State Sci. Technol. 13, 083010, 2023.
[21]  I.M. Afandiyeva, SH.G. Askerov, L.K. Abdullayeva, SH.S. Aslanov. The obtaining of Al–Ti10W90–Si(n) Schottky diodes and investigation of their interface surface states density/ Solid-State Electronics 51 (2007) p.1096–1100, 2007.
[22]  J.O. Bodunrin, D.A. Oeba, S.J. Moloi. Current-voltage and capacitance-voltage characteristics of cadmium-doped p-silicon Schottky diodes. Sens. Actuators A: Phys. 331, 2021.