INFLUENCE OF Tb CONCENTRATION ON CHARGE CARRIER KINETICS AND STRUCTURAL DEFECTS
IN TbxSn1-xSe ALLOYS
T.A. Jafarov1, O.M. Gasanov1, Kh.A. Adgezalova1, H.A. Aslanov1, J.I. Huseynov1, I.I. Abbasov2
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ABSTRACT

The structural and kinetic properties of TbxSn1-xSe (0 ≤ x ≤ 0.05) alloys grown by the Bridgman method were investigated. X-ray analysis showed that solid solutions are formed in accordance with Vegard’s law, with lattice parameters increasing with Tb concentration. Electrical measurements revealed that pure SnSe exhibits p-type conductivity, while at x ≈ 0.25 mol% a transition from p-type to n-type conductivity occurs. With increasing Tb content, the electron concentration rises, the Hall coefficient stabilizes at negative values, and mobility remains nearly constant due to the formation of defect complexes. The results confirm the crucial role of Tb doping in controlling the electronic properties of SnSe-based solid solutions.

Keywords: solid solution, electrical conductivity, Hall coefficient, cation vacancy, conductivity type transition, charge carrier mobility, crystal lattice defects, rare-earth dopant impurities.
DOI:10.70784/azip.1.2025332

Received: 02.09.2025
Internet publishing: 19.09.2025    AJP Fizika E 2025 03 en p.32-39

AUTHORS & AFFILIATIONS

1. Azerbaijan State Pedagogical University, AZ-1000, Baku, Uz.Hajibeyli Str.68, Azerbaijan E-mail: xatirafizik@mail.ru;
2. Azerbaijan State Oil and Industry University, Az-1010, Baku, Azadliq Avenue 20, Azerbaijan

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