ELECTROPHYSICAL PROPERTIES OF PbSe, Pb1-xEuxSe THIN FILMS AND HETEROJUNCTIONS ON THEIRS BASE
I.R. Nuriyev1, A.M. Nazarov1, M.S. Sadigov1, S.S. Farzaliyev1, R.M. Sadigov1,2, V.R. Abdulsalamova1
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ABSTRACT

PbSe, Pb1-xEuxSe thin films and PbSe-Pb1-xEuxSe heterojunctions were successfully fabricated on ultrasonically cleaned glass substrates using molecular beam deposition technic from a Knudsen cell made of high-purity graphite under a vacuum of 10-4 Pa and subsequently investigated. X-ray diffraction (XRD) patterns revealed that all films exhibited dominant (200) peaks, indicating a highly textured structure. The surface morphology, concentration, and type of charge carriers depended on the substrate temperature, the temperature of the additional compensating selenium source, and the deposition rate. It should be noted that, a transition from n-type to p-type conductivity occurred at the additional compensating selenium source temperature (TSe) of 450 K. A smooth and uniform surface without clusters was achieved under the following deposition conditions: θc=8÷9 Å/sec, Tsub=620 К.

Keywords: thin films, solid solutions, semiconductor, Pb1-xEuxSe.
DOI:10.70784/azip.1.2025353

Received: 12.09.2025
Internet publishing: 19.09.2025    AJP Fizika E 2025 03 en p.53-55

AUTHORS & AFFILIATIONS

1. Institute of Physics named after H.M. Abdullayev, Ministry of Science and Education of the Republic of Azerbaijan, 131 H. Javid Ave., Baku, AZ-1073, Azerbaijan
2. Azerbaijan Technical University, H. Javid ave., 25, AZ 1073, Baku, Azerbaijan
E-mail: afinnazarov@yahoo.com

Graphics and Images

       

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