CONDUCTIVITY OF (TlInSe2)0.9(TlGaTe2)0.1 SOLID SOLUTION IRRADIATED WITH GAMMA QUANTUMS ON LOCALIZED STATES
1,2,3R.M. Sardarly, 1,4N.A. Aliyeva, 3R.Sh. Rahimov, 3J.H. Jabbarov, 1,2F.T. Salmanov, 1R.A. Mammadov, 2I.X. Mammadov, 1G.E. Mamedova
   download pdf   

ABSTRACT

The dc conductivity of the solid solution of the (TlInSe2)0.9(TlGaTe2)0.1 system irradiated with gamma quanta at doses of 0; 0.1; 0.25 and 0.5 MGy was studied in the temperature range of 100-300 K. The temperature intervals of conductivity for local states before and after radiation exposure were determined. It was shown that with an increase in the radiation exposure dose (0 – 0.5 MGy) the temperature interval of conductivity in local states expands, which is associated with an increase in radiation defects.

Keywords: dc conductivity, solid solution, gamma quantum, jump conductivity.
DOI:10.70784/azip.2.2025432

Received: 09.12.2025
Internet publishing: 12.12.2025    AJP Fizika A 2025 04 az p.32-36

AUTHORS & AFFILIATIONS

1. Ministry of Science and Education of the Republic of Azerbaijan, Institute of Radiation Problems, Baku, Azerbaijan
2. National Aviation Academy, Baku, Azerbaijan
3. Baku State University, Baku, Azerbaijan
4. Azerbaijan University of Architecture and Construction, Baku, Azerbaijan

E-mail: nuranaalislam@gmail.com, mob: +994509831028

Graphics and Images

       

     Fig.1-2-3

 [1]   S.A.Al-Ghamdi, A.A.A.Darwish, T.A. Hamdalla, A.O.M. Alzahrani, S. Khasim, S.I. Qashou, K.F.A. El-Rahman. Optical Materials, 129, 112514, 2022.
[2]   E.M. Gojaev, E.A. Allakhyarov, A.M. Nazarov, K.D. Gyul’mamedov, Kh.S. Khalilova, E.M. Mamedov. Inorg. Mater., 43, 1059–1064, 2007.
[3]   Y.G. Shim, T. Asahi, K. Wakita, N.T. Mamedov, E.N. Alieva, N.A. Abdullaev. Tech. Phys. Lett. 44, 643–645, 2018.
[4]   A.M. Panic. J. Phys. Condens. Matter, 20, 29, 293202, 2008.
[5]   D. Muller, G. Eulenberger, H. Hahn. Z. anorg. Allg. Chem., 398, 207-220, 1973.
[6]   R.M. Sardarly, O.A. Samedov, A.P. Abdullaev, F.T. Salmanov, O.Z. Alekperov, E.K. Huseynov, N.A. Aliyeva. Semiconductors, 45, 11, 1387, 2011.
[7]   R.M. Sardarly, O.A. Samedov, A.P. Abdullaev, E.K. Huseynov, F.T. Salmanov, N.A. Aliyeva, R.Sh.Agaeva. Semiconductors, 47, 5, 707, 2013.
[8]   Rauf Sardarly, Oktay Samedov, Nurana Aliyeva, Arzu Sardarli. Inter. J. of Theoretical and App. Nanotechnology. 1, 1, 21-29, 2012.
[9]   R.M. Sardarly, O.A. Samedov, N.A. Aliyeva, E.K. Huseynov, A.P. Abdullayev, I.S. Gasanov, Y.Q. Nurullayev, F.T. Salmanov. TRANSACTIONS of ANAS (phys. and astronomy), XXXIII, 2, 57-65, 2013.
[10]  A.U. Sheleg, V.G. Gurtovoy, S.N. Mustafayeva, E.M. Kerimova. Phys. Sol. State, 53, 3, 472-475, 2011.
[11]  S.N. Mustafaeva, V.A. Ramazanzade, M.M. Asadov. Mater. Chem. Phys. 40, 2, 142, 1995.
[12]  E.M. Kerimova, S.N. Mustafaeva, A.B. Magerramov. Inorg. Mater., 33, 11, 1121, 1997.
[13]  R.M. Sardarly, A.P. Abdullayev, N.A. Aliyeva, F.T. Salmanov, M.Y. Yusifov, A.A. Orudjeva. Semiconductors, 52, 1111-1117, 2018.
[14]  R.M. Sardarly, G.M. Ashirov, L.F. Mashadiyeva, N.A. Aliyeva, F.T. Salmanov, R.Sh. Agayeva, R.A. Mamedov and M.B. Babanly. Modern Physics Letters B, 36, 32n33, 2250171, 2022.
[15]  R.M. Sardarly, N.N. Gadzhieva, N.A. Aliyeva, S.M. Gakhramanova, R.A. Mammadov. Problems of Atomic Science and Technology (PAST), 152, 4, 23-28, 2024.
[16]  M.M. Asadov, S.N. Mustafaeva. 2014 Tenth International Vacuum Electron Sources Conference (IVESC), St. Petersburg, Russia, 1.
[17]  M.M. Asadov, S.N. Mustafaeva, A.N. Mamedov. Inorg. Mater., 51, 772–778, 2015.
[18]  N.N. Gadzhieva, G.B. Akhmedova, R.A.Mammadov. Problems of Atomic Science and Technology (PAST), 159, 5, 28-32, 2025.
[19]  N.N. Gadzhieva, G.B. Akhmedova, R.A. Mammadov. Problems of Atomic Science and Technology (PAST), 152, 4, 20-22, 2024.
[20]  R.M. Sardarly, F.T. Salmanov, N.A. Alieva. Opt. Spectrosc., 127, 454–458, 2019.
[21]  R.M. Sardarly, O.A. Samedov, F.T. Salmanov, N.A. Alieva. Problems of Atomic Science and Technology, 120, 2, 30-33, 2019.
[22]  R.M. Sardarly, F.T. Salmanov, N.A. Aliyeva, R.M. Abbasli. Modern physics letters b, 34, 11, 2050113, 2020.
[23]  R.M. Sardarly, М.B. Babanly, N.A. Аliyeva, L.F. Mashadiyeva,R.А.Mamadov, G.M. Ashirov, A.A. Saddinova, S.Z. Damirova. East European Journal of Physics, 1, 233-239, 2025.
[24]  FT Salmanov, RM Sardarly, RM Mukhtarov, N.A. Aliyeva, R.A. Mammadov, Z.Q. Zeynalova. Problems of Atomic Science and Technology (PAST), 156, 2, 49-52, 2025.
[25]  R.M. Sardarly, N.A. Aliyeva, R.A. Mammadov, R.Sh. Rahimov, J.H. Jabbarov. Journal of Radiation Researches, 11, 2, 5-10, 2024.
[26]  R.M. Sardarly, O.A. Samedov, N.A. Aliyeva, A.P. Abdullayev, F.T. Salmanov, A.A. Orucova. Journal of Radiation Researches, 3, 1, 5-13, 2016.
[27]  S.N. Mustafaeva, M.M. Asadov, S.S. Huseynova, N.Z. Hasanov, V.F. Lukichev. Phys. Solid State, 64, 6, 617-627, 2022.
[28]  O.Z. Alekperov, A.I. Najafov, E. Nakhmedov, O.A. Samedov, N.A. Aliyeva, G. Jafarova. Journal of Applied Physics, 2018, 123 (13), 135701-1-135701-9.
[29]  R.M. Sərdarlı, F.T. Salmanov, N.Ə. Əliyeva. γ-kvantlarla şüalanmış (TlGaSe2)1-x(2)x bərk məhlullarının impedans xarakteristikaları. AJP Fizika section: Az, 2019, v.XXV, №2, s.34-35.
[30]  R.M. Sərdarlı, O.Ə. Səmədov, A.P.Abdullayev, N.Ə. Əliyeva, E.K. Hüseynov, İ.S. Həsənov, F.T. Salmanov. TlInSe2 kristalında həcmi yüklərin yaratdığı polyarlaşma və ion keçiriciliyi. AJP Fizika section: Az, 2015, v.XXI, №1, s.23-26.
[31]  I. Nuritdinov, U.O. Khodzhaev, F.K. Hallokov, N.Z. Gasanov, S.Kh. Umarov. Semiconductor Physics and Microelectronics. 4, 3-4, 60-67, 2022.
[32]  F.K. Khallokov, G.T. Imanova, S.Kh. Umarov, M.Yu. Tashmetov, N.Z. Gasanov, Z.U. Esanov, I.R. Bekpulatov. Materials Research Innovations, 29, 1, 46-50, 2024.
[33]  N.A. Alieva, A.I. Najafov, T.G. Mamedov. Inorg. Mater. 51, 877–883, 2015.
[34]  R.M. Sardarly, O.A. Samedov, N.A. Aliyeva, E.K.Huseynov, A.P. Abdullayev, F.T. Salmanov, E.M. Kerimova. Semiconductors, 49, 1655–1660, 2015.
[35]  S.N. Mustafaeva, M.M. Asadov, E.M. Kerimova. Phys. Sol. State, 55, 12, 2466-2470, 2013.
[36]  F.N. Abdullaev, T.G. Kerimova, N.A. Abdullaev. Phys. Sol. State, 47, 7, 1221-1224, 2005.
[37]  S.N. Mustafayeva, V.A. Aliyev, M.M. Asadov. Phys. Sol. State, 40, 4, 561-563, 1998.
[38]  G.P. Belenkiy, N.A. Abdullaev, V.N. Zverev, V.Ya. Shteinshraiber. Letters to JETP, 47, 10, 584-587, 1988.
[39]  N.F. Mott, E.A. Davis. Electronic processes in non-crystalline materials. Clarendon, Oxford, 1971, 472 p.
[40]  N.F. Mott. Electrons in disordered structures. Advances in Physics. 2001, 50 (7), pp.865.