EFFECTIVE TEMPERATURE OF ELECTRONS IN A SYMMETRY – CENTERED SEMICONDUCTOR QUANTUM WELL
M.M. Babayev
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ABSTRACT

The heating of electrons in semiconductor quantum wells created from crystals with central symmetry under the influence of a strong electric field has been studied. The effective temperature approximation was used, and since the analysis is done for low temperatures of the lattice, electron scattering only from impurity ions and acoustic phonons has been considered. The dependence of the effective temperature of electrons on the intensity of the electric field and the surface density of the electrons has been calculated. The obtained theoretical results have been applied to a Si/Si1-xGex quantum well. It has been determined that the dependence of the effective temperature of the strongly degenerate electron gas on the intensity of the electric field is approximately quadratic.

Keywords: quantum well, Pöschl-Teller potential, effective electron temperature.
DOI:10.70784/azip.1.2025312

Received: 04.07.2025
Internet publishing: 23.07.2025    AJP Fizika E 2025 03 en p.12-16

AUTHORS & AFFILIATIONS

Institute of Physics Ministry of Science and Education Republic of Azerbaijan, 131 H.Javid ave, Baku, AZ-1073, Azerbaijan
E-mail: m.babayev@physics.science.az

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